Semiconductor Manufacturing
High Carbon, Solution-Processable Materials for Advanced Lithography
Spin on Carbon Inks
Fullerene-based spin-on carbon (SoC) hard masks are a critical component in advanced semiconductor manufacturing, particularly for multilayer etch processes. Nano-C’s ultra-high carbon content and minimal hydrogen presence provide superior etch resistance, reduce feature distortion, and enhance thermal stability, eliminating common issues seen with conventional SoCs. These unique properties make fullerene SoCs ideal for enabling the next generation of high-precision, high-performance semiconductor devices.
Spin-On Carbon Hardmasks for Advanced Node Lithography
Advanced Spin-On Carbon (SOC) hardmasks and underlayers are critical for enabling sub-7nm, high-NA EUV lithography. These materials must deliver exceptional etch resistance, precise film uniformity, and high-temperature stability to facilitate advanced 3D device scaling.
Nano-C's large portfolio of High Carbon Formulations are ideally suited to address the next generation challenges for semiconductor manufacturing.
Explore LiquidCarbon™
Nano-C's LiquidCarbon formulations deliver CVD-level carbon loading in a solution-processable ink, purpose-built for advanced lithography hardmask applications.